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IRFP9140N
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter
Min.
Typ.
Max. Units
Conditions
V (BR)DSS
? V (BR)DSS / ? T J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
-100
–––
–––
-0.11
––– V V GS = 0V, I D = -250μA
––– V/°C Reference to 25°C, I D = -1mA ?
R DS(on)
Static Drain-to-Source On-Resistance
–––
–––
0.117
?
V GS = -10V, I D = -13A ?
––– R G = 5.1 ?
V GS(th)
g fs
I DSS
I GSS
Q g
Q gs
Q gd
t d(on)
t r
t d(off)
t f
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
-2.0
5.3
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
15
67
51
51
-4.0 V V DS = V GS , I D = -250μA
––– S V DS = -50V, I D = 11A ?
-25 V DS = -100V, V GS = 0V
μA
-250 V DS = -80V, V GS = 0V, T J = 150°C
100 V GS = 20V
nA
-100 V GS = -20V
97 I D = -11A
15 nC V DS = -80V
51 V GS = -10V, See Fig. 6 and 13 ??
––– V DD = -50V
––– I D = -11A
ns
––– R D = 4.2 ?, See Fig. 10 ??
L D
L S
Internal Drain Inductance
Internal Source Inductance
–––
–––
5.0
13
–––
–––
nH
Between lead,
6mm (0.25in.)
from package
and center of die contact
G
D
S
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
1300
400
240
––– V GS = 0V
––– pF V DS = -25V
––– ? = 1.0MHz, See Fig. 5 ?
Source-Drain Ratings and Characteristics
Parameter
Min. Typ. Max. Units
Conditions
I S
I SM
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) ??
––– –––
––– –––
-23
-76
A
MOSFET symbol
showing the
integral reverse
p-n junction diode.
G
D
S
V SD
t rr
Q rr
t on
Notes:
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
––– ––– -1.3 V T J = 25°C, I S = -13A, V GS = 0V ?
––– 150 220 ns T J = 25°C, I F = -11A
––– 830 1200 μC di/dt = -100A/μs ?
Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D )
? Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
? Starting T J = 25°C, L = 7.1mH
R G = 25 ? , I AS = -11A. (See Figure 12)
? I SD ≤ -11A, di/dt ≤ -470A/μs, V DD ≤ V (BR)DSS ,
T J ≤ 175°C
? Pulse width ≤ 300μs; duty cycle ≤ 2%.
? Uses IRF9540N data and test conditions
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